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MRF5812G Datasheet, Advanced Power Technology

MRF5812G transistor equivalent, bipolar junction transistor.

MRF5812G Avg. rating / M : 1.0 rating-17

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MRF5812G Datasheet

Features and benefits


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* Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix
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